Charged Semiconductor Defects: Structure, Thermodynamics and by Edmund G. Seebauer, Meredith C. Kratzer

By Edmund G. Seebauer, Meredith C. Kratzer

The technologically necessary homes of an exceptional usually rely on the kinds and concentrations of the defects it includes. no longer strangely, defects in semiconductors were studied for a few years, in lots of situations with a view in the direction of controlling their habit via numerous different types of "defect engineering." for instance, within the bulk, charging considerably impacts the entire focus of defects which are on hand to mediate phenomena resembling solid-state diffusion. floor defects play a big function in mediating floor mass delivery in the course of extreme temperature processing steps equivalent to epitaxial movie deposition, diffusional smoothing in reflow, and nanostructure formation in reminiscence equipment fabrication.

Charged Semiconductor Defects details the present country of information concerning the homes of the ionized defects which can have an effect on the habit of complicated transistors, photo-active units, catalysts, and sensors.

Features:

  • Group IV, III-V, and oxide semiconductors;
  • Intrinsic and extrinsic defects; and,
  • Point defects, in addition to disorder pairs, complexes and clusters.

A an important reference for fabrics scientists, floor scientists, electric engineers, and solid-state physicists seeking to method the subject of disorder charging from an built-in chemical engineering standpoint. Researchers and business practitioners alike will locate its content material precious for equipment and strategy optimization.

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Extra resources for Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion

Example text

3 Thermal Diffusion 23 with the lattice) yield non-Fickian shapes such as exponentials (Vaidyanathan et al. 2006b). In surface diffusion, these considerations apply as follows. The literature often defines a mesoscale diffusivity DM (Seebauer and Jung 2001; Bonzel 1973) (called the “mass transfer diffusivity” in older literature) that incorporates both the hopping diffusivity DI (called “intrinsic diffusivity” in older literature) of a defect and the concentration of mobile defects [Xmobile], normalized by the concentration of substrate atoms [substrate] (not to be confused with [S], the concentration of available lattice sites in the crystal: DM = DI [ X mobile ] [ substrate] .

1994; King et al. 2007). While Vitomirov et al. considered the effects of the semiconductor bulk on surface electronic properties; other work has shown that surface and interface electronic properties affect bulk semiconductor behavior. Two mechanisms can lead to direct surface-bulk coupling: near-surface band bending and defect exchange with dangling bonds. Band bending near a free surface or solid-solid interface occurs when dangling bonds in those regions exchange charge with the semiconductor bulk.

1996) Phys Rev B: Condens Matter 53: 10781–92 Rice SA (1958) Phys Rev 112: 804–811 Rosenwaks Y, Shikler R, Glatzel T et al. (2004) Phys Rev B: Condens Matter 70: 085320 Sahli B, Fichtner W (2005) Phys Rev B: Condens Matter 72: 245210 Saranin AA, Numata T, Kubo O et al. ) New York, Springer Verlag Seebauer EG, Dev K, Jung MYL et al. (2006) Phys Rev Lett 97: 055503 Seeger A, Chik KP (1968) Phys Status Solidi B 29: 455–542 Sharma BL (1990) Diffus Defect Data, Pt A 70/71: 1–102 Sheinkman MK, Kashirina NI, Kislyuk VV (1998) Electric field-caused redistribution of mobile charged donors in semiconductors.

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